ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,280, issued on July 15, was assigned to Renesas Electronics Corp. (Tokyo).
"Semiconductor device and method of manufacturing the same" was invented by Takeshi Kawamura (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "An upper surface of a plug (PL1) is formed so as to be higher than an upper surface of an interlayer insulating film (PIL) by forming the interlayer insulating film (PIL) on a semiconductor substrate (1S), completing a CMP method for forming the plug (PL1) inside the interlayer insulating film (PIL), and then, making the upper surface of the interlayer insulating film (PIL) to recede. In this manner, reliability of connection betwe...