US Patent Issued to RENESAS ELECTRONICS on Jan. 27 for "Semiconductor device and method of manufacturing the same" (Japanese Inventor)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,502, issued on Jan. 27, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Nobuhito Shiraishi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a wiring layer, a dielectric layer covering the wiring layer, a thin film resistor provided on the dielectric layer, and a plug electrode connecting the thin film resistor to the wiring layer. The plug electrode includes a barrier layer and a buried layer. The buried layer is configured by the filling portion filling a region surrounded by a first incline surface, and an extension portion extending...