US Patent Issued to RENESAS ELECTRONICS on Jan. 27 for "Semiconductor device and method of manufacturing the same" (Japanese Inventor)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,549, issued on Jan. 27, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Yoshiki Yamamoto (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A second gate electrode is adjacent, in a Y direction, to a first tip of a semiconductor layer in a first active region such that a protruding distance of a second tip of the second gate electrode protruded, in a X direction, from the semiconductor layer in the first active region is greater than or equal to 0. Also, the first tip of the semiconductor layer in the first active region is covered with a second sidewall spacer. Furthe...