US Patent Issued to RENESAS ELECTRONICS on Jan. 20 for "Semiconductor device and method of manufacturing the same" (Japanese Inventor)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,735, issued on Jan. 20, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Nobuhito Shiraishi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes resistor layers, and a wiring layer which is disposed at least either above or below the resistor layers. The resistor layers include first resistor layers and second resistor layers each having a width in a first direction smaller than a width of the first resistor layer in a first direction. The wiring layer includes first overlapping regions in which the wiring layer overlaps with the first resi...