ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,570, issued on Jan. 13, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Yasutaka Nakashiba (Tokyo) and Toshiyuki Hata (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a first semiconductor chip mounted on a chip mounting portion via a first bonding material; and a second semiconductor chip mounted on the first semiconductor chip via a second bonding material. The first semiconductor chip includes: a protective film; and a first pad electrode exposed from the protective film in a first opening portion of the protective film. The second...