US Patent Issued to RENESAS ELECTRONICS on Feb. 10 for "Manufacturing method of semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,400, issued on Feb. 10, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).

"Manufacturing method of semiconductor device" was invented by Kouichi Konishi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Increasing in a contact-resistance between a trench gate lead-out electrode and a gate lead-out contact member is suppressed. It is assumed that a natural oxidation film is formed in the polysilicon film when the trench gate lead-out electrode is formed. In case of the natural oxidation film is formed, a desired etching process is performed so that the natural oxidation film does not protrude beyond the upper surface of the trench gate lead-out ...