ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,548,617, issued on Feb. 10, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).
"DRAM circuit" was invented by Tetsuo Fukushi (Tokyo), Hiroyuki Takahashi (Tokyo) and Muneaki Matsushige (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A current consumption in a DRAM circuit is reduced. The DRAM circuit is a dynamic random access memory (DRAM) circuit provided with a main input/output line pair and a reset circuit. A potential of the main input/output line pair is held in a period from an end of a write cycle to a start of a first write cycle after the write cycle or a period from the end of the write cycle to a start of a first read cycle after the w...