US Patent Issued to RENESAS ELECTRONICS on Dec. 30 for "Semiconductor device and inspection method for semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,510,587, issued on Dec. 30, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).

"Semiconductor device and inspection method for semiconductor device" was invented by Yoshiaki Tanaka (Tokyo) and Kouji Nakajima (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device making it easy to detect disconnection in source wires and achieving a reduction in resistance and an inspection method for the semiconductor device are provided. A semiconductor device according to the present embodiment includes: a lead frame; a semiconductor chip on the lead frame; a source pad provided in the semiconductor chip; a plurality of source wires connected to ...