US Patent Issued to RENESAS ELECTRONICS on Aug. 26 for "Semiconductor device and method of manufacturing the same" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,336, issued on Aug. 26, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Shotaro Kudo (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an insulating layer (IFL) on a semiconductor substrate (SUB), a conductive film (PL) on the insulating layer (IFL), an interlayer insulating film (IL) covering the conductive film (PL), a contact hole (CH1) in the interlayer insulating film (IL), the conductive film (PL) and the insulating layer (IFL), and a plug (PG1) embedded in the contact hole (CH1). A side surface of the interlayer insulating film (...