ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,656, issued on Aug. 12, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).
"Semiconductor device and method of manufacturing the same" was invented by Tadashi Yamaguchi (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A first amorphous film containing hafnium, oxygen and a first element such as zirconium is formed, a plurality of grains containing a second element different from any of hafnium, oxygen and the first element are formed on the first amorphous film, a second amorphous film made of the same material as the first amorphous film is formed on the plurality of grains and on the first amorphous film, and a metal film is formed on the sec...