US Patent Issued to RENESAS ELECTRONICS on April 29 for "Semiconductor device having integrated turn-on and turn-off resistors and diode" (Japanese Inventor)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,289,918, issued on April 29, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).

"Semiconductor device having integrated turn-on and turn-off resistors and diode" was invented by Takehiro Ueda (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention suppresses an increase in manufacturing cost and reduces switching noise. A field-effect transistor having a gate electrode embedded in a trench in an upper surface of a semiconductor substrate, a source region formed in the semiconductor substrate, and a drain region formed on a lower surface of the semiconductor substrate is provided with a gate wiring formed on the semiconductor substrate...