ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,760, issued on April 29, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).
"Semiconductor device" was invented by Takayuki Igarashi (Tokyo) and Hirokazu Sayama (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including an element isolation in a trench formed in an upper surface of a semiconductor substrate, a trench isolation including a void in a trench directly under the element isolation, and a Cu wire with Cu ball connected to a pad on the semiconductor substrate, is formed. The semiconductor device has a circular trench isolation arrangement prohibition region that overlaps the end portion of the Cu ball in plan view...