US Patent Issued to RENESAS ELECTRONICS on April 29 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,806, issued on April 29, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).

"Semiconductor device" was invented by Kodai Ozawa (Tokyo) and Sho Nakanishi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "The semiconductor device has the main surface, the semiconductor substrate having the first impurity region formed on the main surface, the first electrode formed on the main surface having the first impurity region, the insulating film formed on the main surface such that surround the first electrode, the second electrode formed on the insulating film such that spaced apart from the first electrode and annularly surround the first electrode, and ...