US Patent Issued to RENESAS ELECTRONICS AMERICA on May 13 for "Common gate drive circuit for switching high voltage device" (Canadian Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,301,217, issued on May 13, was assigned to RENESAS ELECTRONICS AMERICA INC. (Milpitas, Calif.).

"Common gate drive circuit for switching high voltage device" was invented by Tetsuo Sato (San Jose, Canada).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices for driving transistors in a power device are described. A semiconductor device can include a voltage source configured to provide a fixed bias voltage to a first device implemented as a common gate device. The semiconductor device can further include a second device connected in series with the first device. The current output of the second device can be connected to a source terminal...