ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,489,368, issued on Dec. 2, was assigned to RENESAS ELECTRONICS AMERICA INC. (Milpitas, Calif.).
"Half bridge overcurrent protection" was invented by Tetsuo Sato (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Apparatuses and circuits for overcurrent protection are described. A circuit can be connected to one of a first hybrid switching device and a second hybrid switching device in a half bridge circuit. The first hybrid switching device can include a first wide-bandgap (WBG) device and a first FET in a cascode arrangement. The first WBG device can have a higher breakdown voltage than the first FET and a larger band gap than the first FE...