US Patent Issued to REALTEK SEMICONDUCTOR on Jan. 20 for "RF amplifier of accurate bias and healthy headroom and method thereof" (California Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,531,532, issued on Jan. 20, was assigned to REALTEK SEMICONDUCTOR CORP. (Hsinchu, Taiwan).

"RF amplifier of accurate bias and healthy headroom and method thereof" was invented by Ahmed Kord (San Diego) and Chia-Liang (Leon) Lin (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method operates to bias an RF receiver by incorporating a first NMOSFET as a common-source amplifier; incorporating a second NMOSFET as a cascode device stacked upon the first NMOSFET, injecting a reference current into a drain of a third NMOSFET; using a first operational amplifier to generate a first bias voltage to control a gate of the first NMOSFET, a gate of ...