US Patent Issued to REALTEK SEMICONDUCTOR on Aug. 19 for "FinFET with discontinuous channel regions" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,204, issued on Aug. 19, was assigned to REALTEK SEMICONDUCTOR Corp. (Hsinchu, Taiwan).

"FinFET with discontinuous channel regions" was invented by Hung-Der Su (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A FinFET with discontinuous channel regions includes M gate-end structure(s), N drain-end structure(s), and a conducting structure. Each gate-end structure includes: a first channel structure including a source region and a first channel region; and a gate structure formed on a surface of the first channel region. Each drain-end structure includes: a second channel structure including a second channel region and a drain region, wh...