US Patent Issued to Raytheon on Nov. 25 for "Backside metallization of flip-chip semiconductor devices" (Texas Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,723, issued on Nov. 25, was assigned to Raytheon Co. (Arlington, Va.).

"Backside metallization of flip-chip semiconductor devices" was invented by Nick Angelo (McKinney, Texas), Ashish Mody (Allen, Texas) and Michelle Moholt (Gunter, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electronic device is provided having a bulk Si layer and an active region positioned on the bulk Si layer. The active region includes at least one semiconductor component defined by a device layout or functions of the electronic device. An opaque structure is positioned on the bulk Si layer or within the bulk Si layer. The opaque structure is configured to prevent ...