US Patent Issued to Raytheon on July 8 for "Cu 3 Sn via metallization in electrical devices for low-temperature 3D-integration" (California Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,911, issued on July 8, was assigned to Raytheon Co. (Arlington, Va.).

"Cu 3 Sn via metallization in electrical devices for low-temperature 3D-integration" was invented by Andrew Clarke (Santa Barbara, Calif.), John J. Drab (Arroyo Grande, Calif.) and Faye Walker (Lompoc, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A Cu3Sn electrical interconnect and method of making same in an electrical device, such as for hybrid bond 3D-integration of the electrical device with one or more other electrical devices. The method of forming the Cu3Sn electrical interconnect includes: depositing a Sn layer in the via hole; depositing a Cu layer atop and in con...