ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,321, issued on Feb. 17, was assigned to Raytheon Co. (Arlington, Va.).
"Rare-earth III-nitride N-polar HEMT" was invented by John Andrew Logan (Lawrence, Mass.), Brian Douglas Schultz (Lexington, Mass.) and Maher Bishara Tahhan (Tewksbury, Mass.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A high electron mobility transistor (HEMT) heterostructure includes a substrate; a N-polar channel layer; and a N-polar barrier layer positioned between the substrate and the channel layer, wherein the barrier layer comprises a rare-earth III-nitride material. The rare earth III-nitride material can be ScAlN."
The patent was filed on Feb. 8, 2022, under Applica...