US Patent Issued to RAYNERGY TEK INCORPORATION on Sept. 23 for "Structure of the photodiode" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,493, issued on Sept. 23, was assigned to RAYNERGY TEK INCORPORATION (Hsinchu, Taiwan).

"Structure of the photodiode" was invented by Yi-Ming Chang (Hsinchu, Taiwan) and Kuen-Wei Tsai (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention is a structure of a photodiode, which comprises a substrate; a first electrode is arranged on the substrate; a first transport layer is arranged on the first electrode; a photoactive layer is arranged on the first transport layer, the photoactive layer includes a P-type semiconductor layer and an N-type semiconductor layer. The P-type semiconductor layer and the N-type semiconductor l...