US Patent Issued to RAYNERGY TEK INCORPORATION on May 13 for "Structure of the photodiode" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,682, issued on May 13, was assigned to RAYNERGY TEK INCORPORATION (Hsinchu, Taiwan).

"Structure of the photodiode" was invented by Yi-Ming Chang (Hsinchu, Taiwan) and Kuen-Wei Tsai (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a structure of photodiode, which comprises a substrate, a first electrode, an electron transport layer, a photoactive layer, a filter layer, and a second electrode. The first electrode is disposed on the substrate. The electron transport layer is disposed on the first electrode. The photoactive layer is disposed on the electron transport layer. The photoactive layer has a firs...