ALEXANDRIA, Va., July 23 -- United States Patent no. 12,367,159, issued on July 22, was assigned to Rambus Inc. (San Jose, Calif.).
"Low latency memory access" was invented by Frederick A. Ware (Los Altos Hills, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes receivers that use CMOS signaling levels (or other relatively large signal swing levels) on its command/address and data interfaces. The memory device also includes an asynchronous timing input that causes the reception of command address information from the CMOS level receivers to be decoded and forwarded to the memory core (which is self-timed) without the need for a clock signal on the memory device's primary clock inp...