US Patent Issued to QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY on Sept. 30 for "LED with ALGAINP window layer" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,068, issued on Sept. 30, was assigned to QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY Co. LTD (Quanzhou, China).

"LED with ALGAINP window layer" was invented by Huiwen Li (Tianjin, China), Dongyan Zhang (Tianjin, China), Kuanfu Pan (Tianjin, China), Shaohua Huang (Tianjin, China) and Duxiang Wang (Tianjin, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor light-emitting device includes a semiconductor light-emitting sequence which includes a first conductive type semiconductor layer, a second conductive type semiconductor layer and a light-emitting layer therebetween, a first electrode electrically connected to the first conductive ty...