US Patent Issued to QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY on May 13 for "Semiconductor light-emitting device" (Chinese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,675, issued on May 13, was assigned to QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY Co. LTD. (Fujian, China).

"Semiconductor light-emitting device" was invented by Zhaowu Huang (Fujian, China), Chang-Chin Yu (Fujian, China), Li Yang (Fujian, China), Chenxi Yan (Fujian, China), Xinglong Li (Fujian, China) and Yang Li (Fujian, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor light-emitting device includes a lead frame, a light-emitting element, and a reflection layer. The lead frame includes a main body and a side body extending upwardly from the main body. The main body and the side body cooperatively define a receiving space. The side...