ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,422, issued on Feb. 3, was assigned to QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY Co. LTD. (Nanan, China).
"Light emitting device" was invented by Qiuxia Lin (Xiamen, China), Senpeng Huang (Xiamen, China), Jian Liu (Xiamen, China), Changchin Yu (Xiamen, China) and Chen-ke Hsu (Xiamen, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A light emitting device includes a package substrate, a patterned conductive layer, an LED chip, and an encapsulation layer. The patterned conductive layer is located on top of the package substrate, and has an isolation region that separates the patterned conductive layer into a first region and a second region. The LED...