US Patent Issued to QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY on Dec. 2 for "Light-emitting epitaxial structure, method for manufacturing the same and infrared light-emitting diode" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,551, issued on Dec. 2, was assigned to QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY Co. LTD. (Nanan, China).

"Light-emitting epitaxial structure, method for manufacturing the same and infrared light-emitting diode" was invented by Wenhao Gao (Fujian, China), Yanbin Feng (Fujian, China), Qian Liang (Fujian, China), Chaoyu Wu (Fujian, China) and Yu-Ren Peng (Tianjin, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light-emitting epitaxial structure includes an n-type ohmic contact layer, an n-type cladding layer, a light emitting layer, a p-type cladding layer, a p-type GaInP transition layer, a p-type AlxGa(1-x)InP transition unit and a p-type GaP o...