ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,296, issued on Aug. 19, was assigned to Quanzhou Sanan Semiconductor Technology Co. Ltd (Fujian, China).
"Light-emitting device" was invented by Huining Wang (Fujian, China), Hongwei Xia (Fujian, China), Quanyang Ma (Fujian, China), Shiwei Liu (Fujian, China), Jiali Zhuo (Fujian, China), Shuo Yang (Fujian, China), Su-Hui Lin (Fujian, China) and Chung-Ying Chang (Fujian, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A light-emitting device includes an epitaxial structure that includes a first semiconductor layer, an active layer and a second semiconductor layer. The light-emitting device further has a transparent current spreading unit, a firs...