US Patent Issued to QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY on Oct. 7 for "Light emitting diode device" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,743, issued on Oct. 7, was assigned to QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co. LTD. (Nanan, China).

"Light emitting diode device" was invented by Xiaoliang Liu (Xiamen, China), Anhe He (Xiamen, China), Kang-wei Peng (Xiamen, China), Su-hui Lin (Xiamen, China), Ling-yuan Hong (Xiamen, China) and Chia-hung Chang (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spr...