US Patent Issued to QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY on May 6 for "Light-emitting diode chip and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,294,037, issued on May 6, was assigned to QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co. LTD. (Nanan, China).

"Light-emitting diode chip and method for manufacturing the same" was invented by Gong Chen (Xiamen, China), Su-Hui Lin (Xiamen, China), Sheng-Hsien Hsu (Xiamen, China), Kang-Wei Peng (Xiamen, China), Ling-Yuan Hong (Xiamen, China), Minyou He (Xiamen, China) and Chia-Hung Chang (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light-emitting diode chip includes a substrate. The substrate has a side surface configured as a serrated surface, which includes a plurality of laser inscribed features disposed along a thickness direction of ...