US Patent Issued to QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY on May 6 for "Light-emitting device having light-emitting units including epitaxial structure and conductive structure" (Chinese Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,294,045, issued on May 6, was assigned to QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co. LTD. (Nanan, China).

"Light-emitting device having light-emitting units including epitaxial structure and conductive structure" was invented by Shaohua Huang (Fujian, China), Xiaoqiang Zeng (Fujian, China), Jianfeng Yang (Fujian, China) and Canyuan Zhang (Fujian, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light-emitting device includes a lead frame having a first surface on which a patterned conductive layer is provided, and a light-emitting element. The light-emitting element includes an insulating substrate formed on the first surface, a plurality of lig...