US Patent Issued to QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY on Jan. 27 for "Light-emitting diode device and method for making the same" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,627, issued on Jan. 27, was assigned to QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co. LTD. (Nanan, China).

"Light-emitting diode device and method for making the same" was invented by Linrong Cai (Xiamen, China), Lixun Yang (Xiamen, China), Hsin-Yi Tseng (Xiamen, China) and Liqin Zhu (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light-emitting diode device includes a substrate and at least one mesa structure disposed on the substrate. The substrate includes at least one light-emitting region-forming area and at least one dicing region-forming area that are spaced apart from each other. The at least one dicing region-forming area sur...