US Patent Issued to QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY on Dec. 30 for "Micro light-emitting device, method for making the same, and light-emitting apparatus" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,514,045, issued on Dec. 30, was assigned to QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co. LTD. (Nanan, China).

"Micro light-emitting device, method for making the same, and light-emitting apparatus" was invented by Yenchin Wang (Xiamen, China), Song Yang (Fujian, China), Xiaolong Wei (Fujian, China), Huanshao Kuo (Tianjin, China) and Yu-Ren Peng (Tianjin, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A micro light-emitting device includes an epitaxial structure and a bridge connection structure. The epitaxial structure includes a first mesa surface and a second mesa surface which are located on the same side of the epitaxial structure with a heigh...