ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,783, issued on Oct. 28, was assigned to QUALCOMM Inc. (San Diego).
"Selective contact on source and drain" was invented by Junjing Bao (San Diego), Xia Li (San Diego), Chih-Sung Yang (Hsinchu, Taiwan), Kwanyong Lim (San Diego), Ming-Huei Lin (New Taipei, Taiwan), Hyunwoo Park (San Diego) and Haining Yang (San Diego).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are devices that include a contact for electrical connection with a source/drain. The contact occupies a full width of a contact well other than areas occupied by sidewall spacers. As a result, high resistivity (due to the presence of liners and nucleation layers within the contact ...