US Patent Issued to QUALCOMM on Oct. 21 for "High-speed and area-efficient parallel-write-and-read memory" (California Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,171, issued on Oct. 21, was assigned to QUALCOMM Inc. (San Diego).

"High-speed and area-efficient parallel-write-and-read memory" was invented by Hochul Lee (Los Angeles), Anil Chowdary Kota (San Diego), Dhvani Sheth (San Diego), Bin Liang (San Diego) and Chulmin Jung (San Diego).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory is provided with a pair of banks including a first bank of bitcells and a second bank of bitcells. An I/O circuit for the pair of banks includes a shared write path configured to couple a write driver input signal to the first bank of bitcells responsive to an assertion of a write enable signal for the first bank of bit...