US Patent Issued to QUALCOMM on Oct. 21 for "Gate spacer structures for three-dimensional semiconductor devices" (California Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,071, issued on Oct. 21, was assigned to QUALCOMM Inc. (San Diego).

"Gate spacer structures for three-dimensional semiconductor devices" was invented by Fadoua Chafik (San Diego) and Xiaochen Zhang (Carlsbad, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are apparatuses and techniques for fabricating an apparatus including a semiconductor device. The semiconductor device may include one or more static random-access memory (SRAM) transistors, each including a first gate spacer structure; one or more logic nominal transistors, each including a second gate spacer structure; and one or more logic gate-biased transistors, each including ...