US Patent Issued to QUALCOMM on Oct. 14 for "Read data capture for a high-speed double data rate interface" (California Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,451, issued on Oct. 14, was assigned to QUALCOMM Inc. (San Diego).

"Read data capture for a high-speed double data rate interface" was invented by Yong Xu (San Diego), Boris Dimitrov Andreev (San Diego), Farrukh Aquil (San Diego), Vikas Mahendiyan (San Diego) and Ravindra Arvind Khedkar (San Diego).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory interface circuit includes a first receiver coupled to a differential data strobe signal and a second receiver that has a first input coupled to a reference voltage source and a second input coupled to one of the pair of complementary signals. A qualification circuit is configured to detect a preamble...