US Patent Issued to QUALCOMM on Oct. 14 for "Complementary field effect transistor (CFET) with balanced N and P drive current" (California Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,264, issued on Oct. 14, was assigned to QUALCOMM Inc. (San Diego).

"Complementary field effect transistor (CFET) with balanced N and P drive current" was invented by Xia Li (San Diego), Junjing Bao (San Diego) and Giridhar Nallapati (San Diego).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are complementary field effect transistors (CFETs) with balanced n and p drive current, and methods for making the same. In an aspect, a CFET structure comprises an nFET with horizontal p-doped nanosheet channels arranged in a first vertical stack, each horizontal p-doped nanosheet channel having a width W1, and connecting a first source contact to a fir...