ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,046, issued on May 20, was assigned to QUALCOMM Inc. (San Diego).
"Enhanced MOSFET with superior RF performance" was invented by Abhijeet Paul (Escondido, Calif.), Ravi Pramod Kumar Vedula (San Diego) and Hyunchul Jung (San Diego).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a transistor of a device that has an asymmetric resistance or an asymmetric capacitive coupling or both. When used in a cascode configuration in an amplifier, low current performance of the amplifier is improved. Asymmetric resistance may be enabled through differentially doping source and drain structures of the transistor and/or through differentially manipulatin...