US Patent Issued to QUALCOMM on May 13 for "Enhanced write buffer flush scheme for memory devices with high density storage memory architecture" (Indian Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,298,912, issued on May 13, was assigned to QUALCOMM Inc. (San Diego).

"Enhanced write buffer flush scheme for memory devices with high density storage memory architecture" was invented by Rajesh Kumar Biswal (Puri, India), Manmeet Singh Ahluwalia (Bangalore, India), Surendra Paravada (Hyderabad, India), Madhu Yashwanth Boenapalli (Hyderabad, India) and Sai Praneeth Sreeram (Anantapur, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "This disclosure provides systems, methods, and devices for memory systems that support enhanced write buffer flush schemes. In a first aspect, a method performed by a memory controller includes maintaining a list of data...