ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,595, issued on June 24, was assigned to QUALCOMM Inc. (San Diego).

"Transistor cell with self-aligned gate contact" was invented by Junjing Bao (San Diego), John Jianhong Zhu (San Diego) and Giridhar Nallapati (San Diego).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are apparatuses including a transistor cell and methods of fabricating the transistor cell. The transistor cell may include a substrate, an active region and a gate having a gate contact in the active region. The transistor cell may further include a first portion of a spacer of the gate contact formed from a first material, and a second portion of the spacer of the gate conta...