US Patent Issued to QUALCOMM on July 8 for "Integrated circuits (ICs) employing multi-pattern metallization to optimize metal interconnect spacing for improved performance and related fabrication methods" (California Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,952, issued on July 8, was assigned to QUALCOMM Inc. (San Diego).

"Integrated circuits (ICs) employing multi-pattern metallization to optimize metal interconnect spacing for improved performance and related fabrication methods" was invented by Bed Raj Kandel (San Diego), Katherine Zhang (San Diego) and Thomas Hua-Min Williams (Irvine, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) includes transistors formed in diffusion regions. In each transistor, a source and a drain extend in a first direction, and a gate is disposed on the diffusion region between the source and the drain. To reduce connection resistance through...