US Patent Issued to QUALCOMM on July 1 for "Write throughput improvement of flash memory device" (Indian Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,346,592, issued on July 1, was assigned to QUALCOMM Inc. (San Diego).

"Write throughput improvement of flash memory device" was invented by Madhu Yashwanth Boenapalli (Hyderabad, India), Sai Praneeth Sreeram (Anantapur, India) and Surendra Paravada (Hyderabad, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "A host device includes a memory configured to store a logical-to-physical address mapping table of a flash memory device. The host device also includes one or more processors coupled to the memory and configured to be coupled to the flash memory device. The one or more processors are configured to determine whether a trigger condition is satisfie...