US Patent Issued to QUALCOMM on Jan. 20 for "Stacked complementary field effect transistor (CFET) and method of manufacture" (California Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,779, issued on Jan. 20, was assigned to QUALCOMM Inc. (San Diego).

"Stacked complementary field effect transistor (CFET) and method of manufacture" was invented by Xia Li (San Diego) and Bin Yang (San Diego).

According to the abstract* released by the U.S. Patent & Trademark Office: "A stacked gate-all-around (GAA) complementary field-effect transistor (CFET) includes a first GAA FET of a first type and a second GAA FET of a second type. Each of the first GAA FET and the second GAA FET includes at least one three-dimensional (3D) semiconductor slab with a channel region and a first surface. A first gate structure surrounds the channel region in the first GAA FET, and a second gat...