US Patent Issued to QUALCOMM on Feb. 3 for "Inductive device structure and process method" (American, Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,328, issued on Feb. 3, was assigned to QUALCOMM Inc. (San Diego).

"Inductive device structure and process method" was invented by Je-Hsiung Lan (San Diego), Jonghae Kim (San Diego), Jui-Yi Chiu (Taichung, Taiwan), Kai Liu (Phoenix) and Nosun Park (San Diego).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device is described. The device includes a substrate having a first cavity. The device also includes a first redistribution layer (RDL) on sidewalls and a base of the first cavity in the substrate and on a first surface of the substrate. The device further includes a fill material in the first cavity."

The patent was filed on Sept. 23, 2022, under ...