US Patent Issued to QUALCOMM on Feb. 11 for "P-type field effect transistor (PFET) on a silicon germanium (Ge) buffer layer to increase Ge in the PFET source and drain to increase compression of the PFET channel and method of fabrication" (California Inventors)

ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,224,347, issued on Feb. 11, was assigned to QUALCOMM Inc. (San Diego).

"P-type field effect transistor (PFET) on a silicon germanium (Ge) buffer layer to increase Ge in the PFET source and drain to increase compression of the PFET channel and method of fabrication" was invented by Bin Yang (San Diego), Xia Li (San Diego) and Haining Yang (San Diego).

According to the abstract* released by the U.S. Patent & Trademark Office: "An exemplary high performance P-type field-effect transistor (PFET) fabricated on a silicon (Si) germanium (Ge)(SiGe) buffer layer with a SiGe source and drain having a Ge percentage higher than a threshold that causes dislocations at a Si substrate interface is ...