US Patent Issued to QUALCOMM on Dec. 30 for "Transistors having different channel lengths and comparable source/drain spaces" (California Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,955, issued on Dec. 30, was assigned to QUALCOMM Inc. (San Diego).

"Transistors having different channel lengths and comparable source/drain spaces" was invented by Kwanyong Lim (San Diego), Hyunwoo Park (San Diego), Junjing Bao (San Diego) and Haining Yang (San Diego).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are techniques for a semiconductor structure. In an aspect, a semiconductor structure includes a first gate structure disposed on a substrate and having a first channel length; a second gate structure disposed on the substrate and having the first channel length, a first source/drain space between the first gate structure and the...