US Patent Issued to QUALCOMM on Dec. 23 for "Self-aligned source/drain contact structure and method of manufacturing the same" (American, Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,035, issued on Dec. 23, was assigned to QUALCOMM Inc. (San Diego).

"Self-aligned source/drain contact structure and method of manufacturing the same" was invented by Junjing Bao (San Diego), Haining Yang (San Diego), Hyunwoo Park (San Diego), Kwanyong Lim (San Diego) and Ming-Huei Lin (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are techniques for a semiconductor structure. In an aspect, a semiconductor structure includes a gate structure disposed on a substrate, a gate spacer adjacent to the gate structure, a source/drain structure adjacent to the gate spacer, a first dielectric layer disposed on the substrate and th...