ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,857, issued on Dec. 2, was assigned to QUALCOMM Inc. (San Diego).
"Static random access memory (SRAM) fault correction" was invented by Darshan Kumar Nandanwar (Bangalore, India), Kartik Gunvantbhai Desai (Savarkundla, India) and Raghava Rao M V (Bangalore, India).
According to the abstract* released by the U.S. Patent & Trademark Office: "This disclosure provides systems, methods, and devices for memory systems that support SRAM fault correction. In a first aspect, a method includes receiving, by a memory controller coupled to a memory module through a first channel and configured to store data in and access data stored in the memory module through the first channel from a host d...