ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,493,428, issued on Dec. 9, was assigned to PURE STORAGE INC. (Santa Clara, Calif.).
"Storage system having roving memory region" was invented by Ying Gao (San Jose, Calif.), Boris Feigin (San Francisco) and Hari Kannan (Sunnyvale, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A storage system has NVRAM (nonvolatile random-access memory), storage memory that includes SLC (single level cell) flash memory and QLC (quad level cell) flash memory, and a processor. The processor performs a method that includes selecting one of a plurality of write paths for incoming data, and writing the incoming data via the selected write path. A first write path incl...